|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APT100GT60B2R(G) APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT(R) The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed. Features * Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * RoHS Compliant G E * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current G C E G C E C Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25C unless otherwise specified. Ratings 600 Volts 30 148 80 300 300A @ 600V 500 -55 to 150 Watts C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 1.5mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 30V) Min 600 3 1.7 - Typ 4 2.1 2.5 - Max 5 Unit Volts 2.5 25 A 300 nA 052-6297 Rev A 7 - 2008 ICES IGES 1000 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT100GT60B2R_LR(G) Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 100A TJ = 150C, RG = 4.3 , VGE = 15V, L = 100H, VCE= 600V Inductive Switching (25C) VCC = 400V VGE = 15V 4 5 Min 300 - Typ 5150 475 295 8.0 460 40 210 Max - Unit pF V Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy nC A 40 75 320 100 3250 3525 3125 40 75 350 100 3275 4650 3750 J ns J ns IC = 100A RG = 4.3 TJ = +25C Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy 4 5 Inductive Switching (125C) VCC = 400V VGE = 15V IC = 100A RG = 4.3 TJ = +125C - Turn-Off Switching Energy 6 Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions RJC RJC WT Torque Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws Min - Typ 29.2 - Max 0.25 Unit C/W N/A 10 1.1 g in*lbf N*m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. 052-6297 Rev A 7 - 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 200 V GE APT100GT60B2R_LR(G) 300 12, 13, &15V 10V IC, COLLECTOR CURRENT (A) 250 9V 200 8V = 15V 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE TC = 25C TC = 125C 150 TC = -55C 100 7V 6V 50 0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 200A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 100A C T = 25C J TJ = -55C 14 12 10 8 6 4 2 0 0 VCE = 120V VCE = 300V VCE = 480V TC = 25C TC = 125C 100 200 300 400 GATE CHARGE (nC) 500 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 0 6 IC = 50A IC = 100A IC = 200A IC = 100A IC = 50A 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200 IC, DC COLLECTOR CURRENT(A) 1.10 VGS(TH), THRESHOLD VOLTAGE 1.05 (NORMALIZED) 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature 180 160 140 120 100 052-6297 Rev A 7 - 2008 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature Typical Performance Curves 35 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 25 20 15 10 VCE = 400V APT100GT60B2R_LR(G) 450 400 350 300 250 200 150 100 50 0 VCE = 400V RG = 4.3 L = 100H VGE =15V,TJ=25C VGE = 15V VGE =15V,TJ=125C 5 TJ = 25C, or 125C 0 RG = 4.3 L = 100H 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250 RG = 4.3, L = 100H, VCE = 400V 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 RG = 4.3, L = 100H, VCE = 400V 200 tr, RISE TIME (ns) tf, FALL TIME (ns) 160 140 120 100 80 60 40 TJ = 25 or 125C,VGE = 15V TJ = 125C, VGE = 15V 150 100 50 TJ = 25C, VGE = 15V 20 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000 EOFF, TURN OFF ENERGY LOSS (J) 10000 8000 6000 4000 2000 TJ = 25C V = 400V CE V = +15V GE R = 4.3 G 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 16000 EON2, TURN ON ENERGY LOSS (J) 14000 12000 TJ = 125C V = 400V CE V = +15V GE R = 4.3 G 0 0 TJ = 125C 10000 8000 6000 4000 2000 0 TJ = 25C 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 35000 SWITCHING ENERGY LOSSES (J) 30000 25000 20000 15000 10000 5000 0 Eon2,50A Eoff,200A Eon2,100A Eoff,100A Eoff,50A V = 400V CE = +15V V GE T = 125C J 0 25 50 70 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 16000 SWITCHING ENERGY LOSSES (J) V = 400V CE V = +15V GE R = 4.3 G 0 Eon2,200A Eon2,200A 14000 12000 10000 8000 6000 Eoff,200A 052-6297 Rev A 7 - 2008 4000 Eon2,100A 2000 Eoff,50A 0 Eon2,50A Eoff,100A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10,000 Cies 5,000 C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) 350 300 250 200 150 100 50 0 APT100GT60B2R_LR(G) P 1,000 500 C0es Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.9 0.20 0.7 0.15 0.5 0.10 Note: PDM t1 t2 0.3 0.05 0.1 0.05 0 10 -5 SINGLE PULSE 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 100 FMAX, OPERATING FREQUENCY (kHz) 50 T = 75C C TJ (C) 0.0587 Dissipated Power (Watts) 0.0120 0.420 4.48 0.132 TC (C) 0.0587 10 5 T = 125C J D = 50 % V = 400V CE R = 4.3 T = 100C C ZEXT = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf max F f max2 = Pdiss = ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Pdiss - P cond E on2 + E off TJ - T C R JC 1 G FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 20 052-6297 Rev A 7 - 2008 APT100GT60B2R_LR(G) APT100DQ60 Gate Voltage 10% TJ = 125C td(on) V CC IC V CE tr 90% 5% CollectorVoltage Collector Current 5% 10% A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage TJ = 125C td(off) 90% CollectorVoltage tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) Collector 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector Emitter 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Collector Emitter 052-6297 Rev A 7 - 2008 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
Price & Availability of APT100GT60B2R |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |